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This Letter focuses on the piezoelectric microcantilever probe fabrication processes. The sensing layer was lead zirconate titanate (PZT) thin?films, prepared by sol–gel process, and formed on the Pt/Ti/SiO2/Si (100) substrate. The silicon-based microcantilever probe fabrication?process is based on the microelectromechanical system technology. The compatible processes make the PZT thin films successfully fabricated?on the silicon-based microcantilever. The size of piezoelectric cantilever is 450 mm in length, 70 mm in width and 12 mm in thickness. The?spring constant of the cantilever probe is 41.28 N/m measured by the micro-force testing system. The first resonance frequency of the cantilever?probe is 43.78 KHz. The low leakage current of the PZT thin films is 0.265 nA with the applied voltage of 1 V. The results reveal that the?piezoelectric cantilever probe can be substituted for the traditional atomic force microscopy probe.