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(Pb, La) (Zr, Ti)O3 (PLZT) antiferroelectric thick films were deposited on Pt (111)/Ti/SiO2/Si (100) substrates via sol-gel process. X-ray diffraction (XRD) analysis indicated that the?films derived on Pt (111)/ Ti/SiO2/Si (100) substrates showed strong (111) preferred orientation. The?Bulk and Surface silicon of micromachining process were employed in the silicon-based?antiferroelectric thick film microcantilever fabrication, such as wet chemical etching for PLZT,?inductive couple?plasmas (ICP)for silicon etching, platinum etching and so on. Challenges such as?Pt/Ti bottom electrode and morphology of PLZT thick film were solved, the integration of functional?antiferroelectric materials and MEMS technology, provide a new way of thinking for the design and?manufacture of micro-actuators.

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作者

Yu Hua Yang,Zhen Yu Zhao,Xin Feng Guan,Xiu Jian Chou

期刊

Applied Mechanics and Materials

年份