国产成人亚洲精品无码青app,白丝紧致爆乳自慰喷水,国产疯狂女同互磨高潮在线观看,jizzjizz少妇亚洲水多

The impact of nanoporous SiNx interlayer growth position on high-quality GaN epitaxial film was elucidated from the behavior of?dislocations. The best quality GaN film was achieved when a nanoporous SiNx interlayer was grown on a rough layer, with the?high-resolution X-ray diffraction rocking curve full width at half maximum for (1102 ) reflection decreasing to 223 arcs, and the?total dislocation density reduced to less than 1.0×108 cm?2. GaN films were grown on sapphire substrates by metal organic chemical?vapor deposition. The quality of these films was investigated with high-resolution X-ray diffraction, atomic force microscopy,?and cross-sectional transmission electron microscopy. A preference for the formation of half-loops to reduce threading dislocations?was observed when an SiNx interlayer was grown on a rough layer. A growth mechanism is proposed to explain this preference.