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Anodic aluminum oxide (AAO) template was prepared by a two-step anodization method at low temperature (1 °C) and silicon carbide was deposited on the templates by non-reactive radio frequency sputtering method. Well-aligned quasi-one dimension silicon carbide nanorods with the average diameter about 80–90 nm and a mean length of 400 nm were obtained perpendicular to the substrate and observed by AFM and SEM after the aluminum substrates were striped off. Then some samples were annealing at flowing N 2 at 400, 500 and 600 °C and FTIR was performed on these samples to obtain the information of structure.

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作者

Dayin Xu,Zhiwei He,Yongping Guo,Yinyue Wang

期刊

Microelectronic Engineering

年份